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DMN2075UDW
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8V
Units
V
V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 5) V GS = 2.5V
Pulsed Drain Current (10 μ s pulse, Duty cycle = 1%)
Maximum Continuous Body Diode Current
Steady
State
t<5s
Steady
State
t<5s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
2.8
2.2
3.1
2.5
2.6
2.1
2.8
2.2
20
1.0
A
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 4)
Characteristic
Symbol
P D
Value
0.5
Units
W
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<5s
Steady state
t<5s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
257
213
0.58
221
183
65
-55 to +150
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
0.4
-
1.0
V
V DS = V GS , I D = 250 μ A
-
40
48
V GS = 4.5V, I D = 3A
Static Drain-Source On-Resistance
R DS (ON)
-
-
45
51
59
70
m Ω
V GS = 2.5V, I D = 2A
V GS = 1.8V, I D = 1A
-
68
100
V GS = 1.5V, I D = 1A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
-
13
0.75
-
1.0
S
V
V DS = 5V, I D = 3A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 3.6A
V DD = 10V, V GS = 4.5V,
R L = 2.78 ? , R G = 1.0 ?
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.
DMN2075UDW
Document number: DS35542 Rev. 1 - 2
2 of 6
www.diodes.com
September 2011
? Diodes Incorporated
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